EPITAXIAL REGROWTH OF N-DEGREES-C, INDUCED BY FLUORINE IMPLANTATION( POLYCRYSTALLINE SILICON AT 850)

Authors
MOISEIWITSCH NE MARSH C ASHBURN P BOOKER GR
Citation
Ne. Moiseiwitsch et al., EPITAXIAL REGROWTH OF N-DEGREES-C, INDUCED BY FLUORINE IMPLANTATION( POLYCRYSTALLINE SILICON AT 850), Applied physics letters, 66(15), 1995, pp. 1918-1920
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
15
Year of publication
1995
Pages
1918 - 1920
Database
ISI
SICI code
0003-6951(1995)66:15<1918:ERONIB>2.0.ZU;2-R