LOW REGROWTH-INTERFACE RECOMBINATION RATES IN INGAAS-GAAS BURIED RIDGE LASERS FABRICATED BY IN-SITU PROCESSING

Authors
STRAND TA THIBEAULT BJ MUI DSL COLDREN LA PETROFF PM HU EL
Citation
Ta. Strand et al., LOW REGROWTH-INTERFACE RECOMBINATION RATES IN INGAAS-GAAS BURIED RIDGE LASERS FABRICATED BY IN-SITU PROCESSING, Applied physics letters, 66(15), 1995, pp. 1966-1968
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
15
Year of publication
1995
Pages
1966 - 1968
Database
ISI
SICI code
0003-6951(1995)66:15<1966:LRRRII>2.0.ZU;2-8