HIGH-SURFACE-AREA SILICON-CARBIDE FROM RICE HUSK - A SUPPORT MATERIALFOR CATALYSTS

Authors
SINGH SK PARIDA KM MOHANTY BC RAO SB
Citation
Sk. Singh et al., HIGH-SURFACE-AREA SILICON-CARBIDE FROM RICE HUSK - A SUPPORT MATERIALFOR CATALYSTS, Reaction kinetics and catalysis letters, 54(1), 1995, pp. 29-34
Citations number
6
Categorie Soggetti
Chemistry Physical
Journal title
Reaction kinetics and catalysis letters → ACNP
ISSN journal
01331736
Volume
54
Issue
1
Year of publication
1995
Pages
29 - 34
Database
ISI
SICI code
0133-1736(1995)54:1<29:HSFRH->2.0.ZU;2-D
Abstract
Ultrafine beta-SiC with high surface area (150 m(2) g(-1)) has been sy nthesized by inflight processing of charred rice husk in a r.f. plasma reactor operating at atmospheric pressure. The plasma-synthesized par ticles were doped with platinum (1%) and tested as a catalytic support material. The catalyst (1% Pt doped beta-SiC) showed 100% conversion of CO to CO2 at a temperature as low as 175 degrees C.