Mh. Macdougal et al., EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES, IEEE photonics technology letters, 7(4), 1995, pp. 385-387
Epitaxially-grown distributed Bragg reflectors (DBR's) employing therm
ally oxidized AlAs as the low refractive index constituent and (Al,Ga)
InP as the high index constitutent are fabricated. The 4.5-pair Ga0.5I
n0.5P-oxide and AI0.5In0.5P-oxide DBR's exhibit high reflectivity (>90
%) over a range of 635-967 nm and 470-676 nm, respectively. The (Al,Ga
)InP-oxide DBR's are shown to require less material to produce high re
flectivity and to have significantly wider bandwidth than all-semicond
uctor DBR's used in the visible spectrum.