EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES

Citation
Mh. Macdougal et al., EPITAXIAL (AL,GA)INP OXIDE DISTRIBUTED BRAGG REFLECTORS FOR USE IN VISIBLE-WAVELENGTH OPTICAL-DEVICES, IEEE photonics technology letters, 7(4), 1995, pp. 385-387
Citations number
11
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
7
Issue
4
Year of publication
1995
Pages
385 - 387
Database
ISI
SICI code
1041-1135(1995)7:4<385:E(ODBR>2.0.ZU;2-Z
Abstract
Epitaxially-grown distributed Bragg reflectors (DBR's) employing therm ally oxidized AlAs as the low refractive index constituent and (Al,Ga) InP as the high index constitutent are fabricated. The 4.5-pair Ga0.5I n0.5P-oxide and AI0.5In0.5P-oxide DBR's exhibit high reflectivity (>90 %) over a range of 635-967 nm and 470-676 nm, respectively. The (Al,Ga )InP-oxide DBR's are shown to require less material to produce high re flectivity and to have significantly wider bandwidth than all-semicond uctor DBR's used in the visible spectrum.