SENSITIVITY ANALYSIS OF DIPOLE LAYERS AT SEMICONDUCTORS INTERFACES

The modification of semiconductor heterojunction band offsets by the i nclusion of an interfacial dipole layer is addressed in this article. It is well known that the introduction of delta-layers at or near semi conductor junctions can alter the band alignment and change the band p rofile at interfaces (e.g. using pairs of sheet Si and Be atoms in GaA s). However, disregarding problems associated with diffusion, the rela tive accuracy of each doping concentration and the need for charge neu trality in these structures is a non-trivial point that needs serious consideration when designing such systems. In this paper we consider t he sensitivity of the band offset control on the degree of unequal cha rge concentration with delta-layers pairs and comment on the practical ities involved in the introduction of a dipole induced by a binary com pound (e.g. ZnSe) at an interface.