SCANNING-TUNNELING-MICROSCOPY OF TTF-TCNQ SINGLE-CRYSTAL AND THIN-FILM

Citation
N. Arakato et al., SCANNING-TUNNELING-MICROSCOPY OF TTF-TCNQ SINGLE-CRYSTAL AND THIN-FILM, Synthetic metals, 70(1-3), 1995, pp. 1245-1246
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
ISSN journal
03796779
Volume
70
Issue
1-3
Year of publication
1995
Pages
1245 - 1246
Database
ISI
SICI code
0379-6779(1995)70:1-3<1245:SOTSAT>2.0.ZU;2-J
Abstract
We have studied single crystals and thin films deposited on alkali hal ides of one-dimensional organic conductor, tetrathiafulvalene-tetracya noquinodimethane (TTF-TCNQ), by scanning tunneling microscope (STM). T he molecular structures of both samples imaged by STM were similar and the I-V (tunneling current - bias voltage) curves measured were both metallic at room temperature. However, when thin films were cooled fro m room temperature, some parts of films showed to be insulating at sim ilar to 200K which is much higher than the critical temperature of the metal-insulator phase transition which was observed for the bulk sing le crystal (53K). The results may suggest that the charge density wave occurs at higher temperature in thin films as in the case of (BEDT-TT F)(2)I-3 films.