Selective deposition of Ni-P alloy thin film on p-type silicon was obt
ained in a hypophosphite-based conventional electroless nickel plating
solution at ambient temperature under laser irradiation. Composition
and properties of the deposits were investigated using SEM, XPS, AES a
nd RBS techniques. The presence of HF and a sufficient power density a
re necessary for deposition of a detectable film. Crystalline Ni-P all
oy deposits are formed and a diffusion of elements at the interface is
found. The mechanism involved in the deposition process is also discu
ssed. The Ni-P deposits are in Schottky barrier contact with p-type si
licon.