LASER-INDUCED SELECTIVE DEPOSITION OF NI-P ALLOY ON SILICON

Citation
J. Wang et al., LASER-INDUCED SELECTIVE DEPOSITION OF NI-P ALLOY ON SILICON, Applied surface science, 84(4), 1995, pp. 383-389
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
84
Issue
4
Year of publication
1995
Pages
383 - 389
Database
ISI
SICI code
0169-4332(1995)84:4<383:LSDONA>2.0.ZU;2-G
Abstract
Selective deposition of Ni-P alloy thin film on p-type silicon was obt ained in a hypophosphite-based conventional electroless nickel plating solution at ambient temperature under laser irradiation. Composition and properties of the deposits were investigated using SEM, XPS, AES a nd RBS techniques. The presence of HF and a sufficient power density a re necessary for deposition of a detectable film. Crystalline Ni-P all oy deposits are formed and a diffusion of elements at the interface is found. The mechanism involved in the deposition process is also discu ssed. The Ni-P deposits are in Schottky barrier contact with p-type si licon.