NANOSCALE STRUCTURING BY MISFIT DISLOCATIONS IN SI1-XGEX SI - EPITAXIAL SYSTEMS/

Authors
SHIRYAEV SY JENSEN F HANSEN JL PETERSEN JW LARSEN AN
Citation
Sy. Shiryaev et al., NANOSCALE STRUCTURING BY MISFIT DISLOCATIONS IN SI1-XGEX SI - EPITAXIAL SYSTEMS/, Physical review letters, 78(3), 1997, pp. 503-506
Citations number
23
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
78
Issue
3
Year of publication
1997
Pages
503 - 506
Database
ISI
SICI code
0031-9007(1997)78:3<503:NSBMDI>2.0.ZU;2-9
Abstract
New capabilities of misfit dislocations for spatial manipulation of is lands in Si1-xGex/Si heteroepitaxial systems have been elucidated. For mation of highly ordered Ge-island patterns on substrates prestructure d by slip bands of misfit dislocations is revealed. The major sources leading to the ordering are identified to be dislocation strain fields at the surface and modifications of the nearsurface-layer morphology induced by dislocation slip.