SOLID-PHASE EPITAXIAL-GROWTH OF GE ON H-TERMINATED AND OXIDIZED SI(100) SURFACES

Thin Ge films with a thickness of about 10 nm were deposited on hydrog en-terminated and oxidized Si(100) surfaces using electron beams. We p repared the above two types of surfaces by chemical treatments and mea sured the amounts of oxygen and hydrogen by ion channeling and nuclear resonant reaction of H-1(N-15, alpha gamma)C-12, respectively. They w ere estimated to be 1.2 nm (SiO2) and 2.3 +/- 0.3 x 10(15) H/cm(2) (ab out 3 monolayers). The samples were post-annealed at 600, 800, 900 and 1000 degrees C% for 5 s in a high vacuum. The hydrogen-terminated Si( 100) has a strongly stable hydride structure, which remains at the Ge/ Si interface up to 900 degrees C. This very thin and stable Si-hydride surface brings significant effects to improve the surface morphology and crystallinity and to hold steep interfaces compared with the oxidi zed surface.