A POLY(3-METHYLTHIOPHENE) DIODE BASED ON A P-N HOMOJUNCTION PREPARED BY COMBINATION OF ELECTROCHEMICAL CATION DOPING AND PHOTOCHEMICAL ANION DOPING

Authors
KUNUGI Y HARIMA Y YAMASHITA K
Citation
Y. Kunugi et al., A POLY(3-METHYLTHIOPHENE) DIODE BASED ON A P-N HOMOJUNCTION PREPARED BY COMBINATION OF ELECTROCHEMICAL CATION DOPING AND PHOTOCHEMICAL ANION DOPING, Journal of the Chemical Society, Chemical Communications, (7), 1995, pp. 787-788
Citations number
6
Categorie Soggetti
Chemistry
Journal title
Journal of the Chemical Society, Chemical Communications → ACNP
ISSN journal
00224936
Issue
7
Year of publication
1995
Pages
787 - 788
Database
ISI
SICI code
0022-4936(1995):7<787:APDBOA>2.0.ZU;2-Z
Abstract
An organic p-n homojunction diode was made using a single poly(3-methy lthiophene) film electrochemically cation-doped on one side and photoc hemically anion-doped on the other side.