SILICON-ON-INSULATOR OBTAINED BY HIGH-DOSE OXYGEN IMPLANTATION, MICROSTRUCTURE, AND FORMATION MECHANISM

The significant difference in the formation of thermally grown oxide a nd the buried oxide (BOX) produced by high dose oxygen implantation in silicon (SIMOX) is described. The different sources of the defects in the Si overlayer and the SiO2 buried layer produced during implantati on and annealing treatment are discussed. The trapping of Si in the BO X results in the formation of Si islands and strained Si-Si bonds. Sta cking fault (SF) complexes are formed during the high temperature anne aling at the interface between the Si overlayer and the buried oxide d ue to the dissolution of the SiO2 precipitates. The morphology and den sity of the SF complexes under different implantation conditions are s tudied. The role of the sacrificial oxidation of the Si overlayer in t he defect generation before and after high temperature annealing is di scussed.