The properties of a highly selective chemical etchant composed of hydr
ofluoric acid, hydrogen peroxide, and acetic acid (HF;H2O;CH3COOH) is
investigated in etching SiGe/Si heterostructures. This solution has be
en found to etch Si1-xGex much faster than Si over the entire range of
Ge contents. The etch rate dependences are presented as functions of
solution composition, Ge content, dopant type, diluent type, temperatu
re, and stirring. Both n-type and p-type Si1-xGex layers with Ge conte
nts of 0 less than or equal to x less than or equal to 0.60 and 0 less
than or equal to x less than or equal to 1.00, respectively, are inve
stigated. It is found that the n-type faster rate than p-type for all
Ge contents examined. When CH3COOH is used as the diluent instead of H
2O a significant enhancement in the etch rate results for all concentr
ations of Ge studied. Also, the amount of H2O2 in the presence of CH3C
OOH has a significant effect on the magnitude of the etch rate as well
as its behavior over time.