PREPARATION OF N-INP AND P-INP FILMS BY PH3 TREATMENT OF ELECTRODEPOSITED IN LAYERS

Thin InP layers have been prepared by electrodeposition of In films on Ti substrates (ca. 2 mg cm(-2) of In) and their annealing in PH3 flow . The obtained material, characterized by scanning electron microscopy -energy dispersive x-ray analysis and x-ray diffraction techniques, sh ows uneven substrate coverage but good crystallinity. Photoelectrochem ical investigations in acidic polyiodide medium show significant n-typ e photoactivity for the samples prepared from a nominally pure In laye r. A p-type photoactivity is obtained depositing a small amount of Zn on top of the In layer prior to annealing. Results are compared with t hose obtained preparing InP layers on Ti by a conventional metallorgan ic chemical vapor deposition technique.