CORRELATIONS BETWEEN THE ELECTRICAL CHARACTERISTICS OF METAL-OXIDE-INP TUNNEL-DIODES AND THE NATURE OF THIN INTERFACIAL OXIDES

Thin native oxides with different compositions were grown on InP befor e metal deposition to increase the Schottky barrier height and the beh avior of-the metal-oxide-InP tunnel diode. Three types of interfacial oxides were compared: they were obtained by thermal, anodic, and W-ass isted oxidation, their composition being close to InPO4, In(PO3)(3), a nd InP0.5O3, respectively. The diode parameters (barrier height, ideal ity factor) were extracted from the electrical characteristics and cor related with the nature of the interfacial oxide. Particular attention was devoted to the study of diode stability under forward and reverse bias voltage. The best results were obtained with W-assisted oxides w hich reached a barrier height of about 0.74 eV, an ideality factor of 1.17 very high stability, and a breakdown voltage of 20 V. These chara cteristics meet the requirements of metal semiconductor field effect t ransistor realization.