GROWTH OF ZNO THIN-FILMS ON GAAS BY PULSED-LASER DEPOSITION

ZnO thin films have been grown on GaAs substrates using the pulsed las er deposition technique with or without a photodeposited SiO2 buffer l ayer. The presence of the SiO2 layer has a beneficial effect on the cr ystalline quality of the grown ZnO films. Highly c-axis oriented ZnO f ilms having a full width at half maximum value of the (002) X-ray diff raction line of less than 0.13 degrees have been grown on such buffer layers at a substrate temperature of only 350 degrees C.