THERMAL EVOLUTION AND DIFFUSION OF EU-IMPLANTED SRTIO3

Citation
Smm. Ramos et al., THERMAL EVOLUTION AND DIFFUSION OF EU-IMPLANTED SRTIO3, Thin solid films, 259(1), 1995, pp. 113-117
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
259
Issue
1
Year of publication
1995
Pages
113 - 117
Database
ISI
SICI code
0040-6090(1995)259:1<113:TEADOE>2.0.ZU;2-Z
Abstract
Europium ions of 70 keV energy were implanted at room temperature in S rTiO3 single crystals with a fluence of 5 x 10(16) ions cm(-2). The da mage and the site locations of cations in the implanted layer were inv estigated by Rutherford backscattering cm spectrometry in channeling g eometry. The oxidation states of the involved atomic species along the Eu distribution profile were determined by X-ray photoemission spectr oscopy (XPS). Following the implantation a fully amorphized layer of a bout 60 nm is generated and XPS spectra reveal europium in EU(2+) and EU(3+) states. Thermal treatments performed in air at 1050 degrees C f or durations up to 12 h have efficently induced both recrystallization of the host lattice and europium diffusion. The XPS results indicate that this diffusion phenomenon can be correlated to a given oxidation state, namely Eu2+.