Europium ions of 70 keV energy were implanted at room temperature in S
rTiO3 single crystals with a fluence of 5 x 10(16) ions cm(-2). The da
mage and the site locations of cations in the implanted layer were inv
estigated by Rutherford backscattering cm spectrometry in channeling g
eometry. The oxidation states of the involved atomic species along the
Eu distribution profile were determined by X-ray photoemission spectr
oscopy (XPS). Following the implantation a fully amorphized layer of a
bout 60 nm is generated and XPS spectra reveal europium in EU(2+) and
EU(3+) states. Thermal treatments performed in air at 1050 degrees C f
or durations up to 12 h have efficently induced both recrystallization
of the host lattice and europium diffusion. The XPS results indicate
that this diffusion phenomenon can be correlated to a given oxidation
state, namely Eu2+.