GROWTH OF BUBBLE-FREE TI-DOPED AL2O3 SINGLE-CRYSTAL BY THE CZOCHRALSKI METHOD

Authors
FUKUDA T OKANO Y KODAMA N YAMADA F HARA S YOON DH
Citation
T. Fukuda et al., GROWTH OF BUBBLE-FREE TI-DOPED AL2O3 SINGLE-CRYSTAL BY THE CZOCHRALSKI METHOD, Crystal research and technology, 30(2), 1995, pp. 185-188
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
30
Issue
2
Year of publication
1995
Pages
185 - 188
Database
ISI
SICI code
0232-1300(1995)30:2<185:GOBTAS>2.0.ZU;2-4
Abstract
The behaviour of bubble entrapment in Ti-doped Al2O3 single crystals g rown by the Czochralski method was studied from the view point of crys tal growth conditions such as the crystal rotation rate and kinds of g rowth atmosphere. The entrapment of bubbles was not correlated with th e shape of solid-liquid interface dependent on crystal rotation rate. We found that the use fo He atmosphere, instead of the conventional at mosphere such as Ar, suppresses the formation of bubbles.