INFLUENCE OF NONSTOICHIOMETRY ON THE RECOMBINATION ACTIVITY OF DISLOCATIONS IN UNDOPED SEMIINSULATING GAAS CRYSTALS

The effect of non-stoichiometry of gallium arsenide melt composition o n the recombination activity of dislocations in undoped semi-insulatin g GaAs crystals is studied and analyzed. It is shown that the deviatio n from the stoichiometric melt composition is one of the major factors affecting the recombination activity of dislocations in undoped semi- insulating GaAs crystals, namely: the recombination activity of disloc ations is increased when the arsenic-rich melt is used, and, on the co ntrary, is decreased when the gallium-rich melt is used. The regularit ies observed are explained by the complex processes of interaction of dislocations with the non-stoichiometry-induced intrinsic point defect s.