SPECTROMICROSCOPY STUDY OF LATERAL BAND BENDING OF THE GE-GASE HETEROSTRUCTURE

We report a study of the lateral band bending at the Ge-GaSe interface . Spectromicroscopy measurements with synchrotron radiation were perfo rmed at the ESCA microscopy line of ELETTRA in Ge patterned films on G aSe substrates. Preliminary results of lateral band bending, chemical reactions and the beam stimulated Ge surface migration are presented. These studies allowed us to seek on the microscopical equivalent of th e semiconductor Debye length and to probe the capabilities of scanning -focused spectromicroscopical systems.