ELECTRONIC-PROPERTIES OF ISOSTRUCTURAL ORGANIC CONDUCTORS (ET)(3)(HSO4)(2) AND [NI(DDDT)(2)](3)(HSO4)(2) - THERMOPOWER AND TIGHT-BINDING CALCULATIONS

Authors
MERZHANOV VA HITS DA YAGUBSKII EB DOUBLET ML CANADELL E
Citation
Va. Merzhanov et al., ELECTRONIC-PROPERTIES OF ISOSTRUCTURAL ORGANIC CONDUCTORS (ET)(3)(HSO4)(2) AND [NI(DDDT)(2)](3)(HSO4)(2) - THERMOPOWER AND TIGHT-BINDING CALCULATIONS, Synthetic metals, 71(1-3), 1995, pp. 1867-1868
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Synthetic metals → ACNP
ISSN journal
03796779
Volume
71
Issue
1-3
Year of publication
1995
Pages
1867 - 1868
Database
ISI
SICI code
0379-6779(1995)71:1-3<1867:EOIOC(>2.0.ZU;2-G
Abstract
The temperature dependence of thermopower of isostructural molecular c onductors [Ni(dddt)(2)](3)(HSO4)(2) and (ET)(3)(HSO4)(2) has been inve stigated. Drastic difference in S(T) dependences is qualitatively expl ained on basis of tight binding band structure calculations. A peak at 25 K in [Ni(dddt)(2)](3)(HSO4)(2) was shown to be manifestation of me tal to semimetal phase transition, and the abrupt decrease at 125 K in (ET)(3)(HSO4)(2) is concerned with metal to insulator phase transitio n. Rather complex semimetal band structure was found in both cases.