THIN-FILM ORGANIC CHANNEL FIELD-EFFECT TRANSISTOR

Accumulation Field effect transistors based on undoped, conducting Lan gmuir-Blodgett films have been successfully made. They exhibit reasona bly high field induced drain current modulation. In the voltage range explored, the onset of drain current saturation is observed. A model a ccounting for the electrical behaviour of these FET's is presented, wh ich gives access to several material characteristics impossible to obt ain by direct measurements on the conducting LB films.