The conductivity of the Langmuir-Blodgett (LB) films was examined in t
erms of a granular structure. The conductivity of bis(ethylenedioxy)te
trathiafulvalene-dec (BO-C(10)TCNQ) LB film was well fitted by the for
mula, sigma = AT(alpha)p(-E(a)/kT), where the behavior is determined b
y the semiconducting domain boundaries in the granular-structured film
. The metallic nature of the domains was revealed by thermoelectric po
wer measurements: the temperature dependence of the thermoelectric pow
er was almost linear with T. The temperature dependence of the conduct
ivity in tridecylmethylammonium-Au(dmit)(2)(3C10-Au) LB film is well e
xplained by a linear combination of Sheng's model and common metal, R
= C(1)exp[T-1/(T+T-0)] + C2T. The conduction was governed by the fluct
uation-induced tunneling between metallic domains.