EFFECTS OF ION-BEAM IRRADIATION ON ELECTRICAL-PROPERTIES OF LANGMUIR-BLODGETT (LB) FILMS

The charge transfer complex (TCNQ complex) LB films were fabricated by using the Moving-Wall method. Among various donors, N-isopropyl 4,4'b ipyridinum was prepared and TCNQ complex of different molar ratios of the acceptor and donor were synthesized. The TCNQ complex LB films wer e deposited onto glass as Y-type films. The conductivity of multilayer s formed from the TCNQ complex was about 10(-3) S/cm in the plane of t he films. The conductivity of these films was found to be strongly dep endent on the ratio of donors. The ion beam (He+, N+ or Ar+) irradiati on on these films were also found to increase the conductivity. The mo st highly conductive films were produced under Nitrogen ion beam irrad iation.