IMPURITY STUDY OF CDZNTE SUBSTRATES USED FOR LPE HGCDTE

Impurities were tracked from raw material purification through to CdZn Te processing in an effort to identify the sources of elements which i mpact on IR photodetector performance. Chemical analyses by GDMS and Z CGFAA effectively showed the levels of impurities introduced into CdZn Te substrate material from the manufacturing processes, A new purifica tion process (ISDZR) for raw materials was developed, resulting in imp roved CdZnTe substrate purity, Substrate CU contamination was found to have detrimental effects on LPE layer and device electrical propertie s for lightly doped HgCdTe.