J. Wang et al., AUGER RECOMBINATION IN LONG-WAVELENGTH STRAINED-LAYER QUANTUM-WELL STRUCTURES, IEEE journal of quantum electronics, 31(5), 1995, pp. 864-875
A model calculation of Auger recombination in strained-layer InGaAs-In
GaA1As and InGaAs-InGaAsP quantum-well structures is presented as an e
xtension of an empirical Auger theory based on the effective mass appr
oximation, The valence band effective masses around k parallel to = 0
are calculated by using a six-band Luttinger-Kohn hamiltonian and the
quasi-Fermi levels are determined with a self-consistent Poisson-Schro
odinger solver under the effective mass approximation, Three basic Aug
er processes are considered with the excited carrier being in a bound
state of the quantum well, as well as an unbound state. The empirical
model includes Fermi statistics as well as a revaluation of the Coulom
b interaction overlap integral in the Anger recombination rate, Bound-
unbound Auger transitions are proved to be an important nonradiative r
ecombination mechanism in strained-layer quantum-well systems, Our cal
culations of Anger coefficient are in reasonable agreement with the ex
perimental data.