STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES CHARACTERIZATION OF CDSBTE THIN-FILMS GROWN BY RADIOFREQUENCY SPUTTERING

Citation
O. Alvarezfregoso et al., STRUCTURAL, OPTICAL AND ELECTRICAL-PROPERTIES CHARACTERIZATION OF CDSBTE THIN-FILMS GROWN BY RADIOFREQUENCY SPUTTERING, Journal of physics and chemistry of solids, 56(1), 1995, pp. 117-122
Citations number
37
Categorie Soggetti
Physics, Condensed Matter",Chemistry
ISSN journal
00223697
Volume
56
Issue
1
Year of publication
1995
Pages
117 - 122
Database
ISI
SICI code
0022-3697(1995)56:1<117:SOAECO>2.0.ZU;2-K
Abstract
CdSbTe films have been prepared by radiofrequency sputtering of CdTe a nd antimonium. The structural, electrical and optical properties were investigated. The film dark conductivity increased monotonically with increasing antimony content. The films structure was polycrystalline o f zinc-blende type with a preferential orientation along the (111) dir ection for Sb concentration up to around 12%. For larger concentration s (30 less than or equal to Sb less than or equal to 60 at.%) the stru cture is injured, showing amorphous-like diffraction patterns. Grain s ize and band gap of the films decreased with increasing Sb content.