155-GHZ AND 213-GHZ ALINAS GAINAS/INP HEMT MMIC OSCILLATORS/

We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlI-nAs/GaInAs/InP HEMT's. These resu lts are believed to be the highest frequency three-terminal oscillator s reported to date, The indium concentration in the channel was 80% fo r high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source sparing of 0.25 mu m. Planar antennas were integrated into the fabrication process resul ting in a compact and efficient quasioptical Monolithic Millimeter-wav e Integrated Circuit (MMIC) oscillator.