PHOTOLUMINESCENCE OF A SILICON-OXIDE FILM FORMED BY ANODIZATION IN THE ELECTROPOLISHING REGION IN HF SOLUTION

Authors
MA XY CHEN LD JI ZG YAO HN QUE DL
Citation
Xy. Ma et al., PHOTOLUMINESCENCE OF A SILICON-OXIDE FILM FORMED BY ANODIZATION IN THE ELECTROPOLISHING REGION IN HF SOLUTION, Journal of physics. Condensed matter, 7(14), 1995, pp. 2901-2907
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Journal of physics. Condensed matter → ACNP
ISSN journal
09538984
Volume
7
Issue
14
Year of publication
1995
Pages
2901 - 2907
Database
ISI
SICI code
0953-8984(1995)7:14<2901:POASFF>2.0.ZU;2-M
Abstract
This paper reports the photoluminescence (PL) Of a silicon oxide film formed by anodization in the electropolishing region in HF solution. T he PL is preliminarily believed to be due to certain light-emitting ce ntres in the silicon oxide film. In addition, the paper suggests that not all the PL of anodized silicon formed in HF solution can be solely ascribed to the porous silicon.