LINEARIZED DIFFERENTIAL TRANSCONDUCTORS IN SUBTHRESHOLD CMOS

Authors
FURTH PM ANDREOU AG
Citation
Pm. Furth et Ag. Andreou, LINEARIZED DIFFERENTIAL TRANSCONDUCTORS IN SUBTHRESHOLD CMOS, Electronics Letters, 31(7), 1995, pp. 545-547
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
7
Year of publication
1995
Pages
545 - 547
Database
ISI
SICI code
0013-5194(1995)31:7<545:LDTISC>2.0.ZU;2-6
Abstract
Three schemes for linearising the transconductance of the basic differ ential pair in subthreshold CMOS are examined: (i) multiple asymmetric differential pairs, (ii) Source degeneration via symmetric diffusers, and (iii) source degeneration via a single diffuser. Using a maximall y flat optimising criterion, the linear range of the basic differentia l pair can be increased by 4-8 times.