HIGH-POWER AND HIGH-EFFICIENCY 1.3-MU-M INASP COMPRESSIVELY-STRAINED MQW LASERS AT HIGH-TEMPERATURES

Authors
OOHASHI H SEKI S HIRONO T SUGIURA H AMANO T UEKI M NAKANO J YAMAMOTO M TOHMORI Y FUKUDA M YOKOYAMA K
Citation
H. Oohashi et al., HIGH-POWER AND HIGH-EFFICIENCY 1.3-MU-M INASP COMPRESSIVELY-STRAINED MQW LASERS AT HIGH-TEMPERATURES, Electronics Letters, 31(7), 1995, pp. 556-557
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
7
Year of publication
1995
Pages
556 - 557
Database
ISI
SICI code
0013-5194(1995)31:7<556:HAH1IC>2.0.ZU;2-E
Abstract
A high output power of 37mW and high slope efficiency of more than 0.5 5 W/A at 90 degrees C has been obtained by using 1.05 mu m InGaAsP bar rier layers with optimised composition for 1.3 mu m InAsP compressivel y-strained MQW laser diodes.