WAVELENGTH SHIFT IN VERTICAL-CAVITY LASER ARRAYS ON A PATTERNED SUBSTRATE

Citation
Le. Eng et al., WAVELENGTH SHIFT IN VERTICAL-CAVITY LASER ARRAYS ON A PATTERNED SUBSTRATE, Electronics Letters, 31(7), 1995, pp. 562-563
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
7
Year of publication
1995
Pages
562 - 563
Database
ISI
SICI code
0013-5194(1995)31:7<562:WSIVLA>2.0.ZU;2-6
Abstract
The authors demonstrate a spatially chirped emission wavelength in ver tical cavity surface emitting laser (VCSEL) arrays grown by molecular beam epitaxy. The wavelength shift is due to a lateral thickness varia tion in the Al0.2Ga0.8As cavity, which is induced by a substrate tempe rature profile during growth. A 20 nm shift in lasing wavelength is ob tained in a VCSEL array.