LOW-TEMPERATURE PD BONDING OF III-V SEMICONDUCTORS

Authors
TAN IH REAVES C HOLMES AL HU EL BOWERS JE DENBAARS S
Citation
Ih. Tan et al., LOW-TEMPERATURE PD BONDING OF III-V SEMICONDUCTORS, Electronics Letters, 31(7), 1995, pp. 588-589
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
7
Year of publication
1995
Pages
588 - 589
Database
ISI
SICI code
0013-5194(1995)31:7<588:LPBOIS>2.0.ZU;2-S
Abstract
The authors have developed a low-temperature Pd bonding technique for integrating InP structures onto GaAs substrates. The solid phase react ions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs inter faces have been characterised by scanning electron microscopy, optical reflectance, and electrical transport measurement.