NOVEL HEMT LAYOUT - THE ROUNDHEMT

Authors
MARSO M SCHIMPF K FOX A VANDERHART A HARDTDEGEN H HOLLFELDER M KORDOS P LUTH H
Citation
M. Marso et al., NOVEL HEMT LAYOUT - THE ROUNDHEMT, Electronics Letters, 31(7), 1995, pp. 589-591
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
7
Year of publication
1995
Pages
589 - 591
Database
ISI
SICI code
0013-5194(1995)31:7<589:NHL-TR>2.0.ZU;2-W
Abstract
A novel HEMT layout with ringshaped gate is reported. This conception avoids the problems related to mesa etching at the active region and p rovides additional possibilities for circuit design. The layer structu re of the investigated device is based on an Al-free InP/InGaAs materi al system. Transistors with a gate length of 0.7 mu m show an f(T) of 40GHz and an f(max) of 117GHz. These values are similar to results obt ained with the conventional HEMT design.