COMPARISON BETWEEN GAAS AND ALINAS GAINAS MSM PDS FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS USING A 2-DIMENSIONAL BIPOLAR PHYSICAL MODEL/

Using a 2D bipolar physical model a comparison is made between GaAs an d AlInAs/GaInAs MSM PD performance (cutoff frequency and quantum effic iency) as a function of the device parameters. This covers the applied potential, electrode spacing, absorbing layer thickness, and heteroju nction effect. We also reported that for millimeter-wave applications we can expect higher operating frequency using an AlInAs/GaInAs MSP PD , whereas we can expect higher quantum efficiency using a GaAs MSM PD. (C) 1995 John Wiley & Sons, Inc.