GROWTH MECHANISMS OF DLC FILMS FROM C- EXPERIMENTAL STUDIES( IONS )

Experimental studies aiming at the elucidation of the as yet poorly un derstood growth mechanisms of DLC films from C+ ions are described. Th ree main characterization methods are employed: (i) atomic force micro scopy (AFM) for nanometer characterization of the surface morphology; (ii) Rutherford backscattering spectroscopy (RBS) combined with profil ometry for density measurements; and (iii) electron energy loss spectr oscopy (EELS) for analysis of the bonding configuration (sp(3)/sp(2)). DLC films were deposited on Si substrates using mass selected C+ ions with well-defined energies in the range 5 eV-2 keV at different subst rate temperatures in the range 25-250 degrees C. The data indicate tha t sp(3) film deposition is associated with internal subsurface growth of very smooth films while sp(2) rich film formation is associated wit h surface growth processes of much rougher films. The data is in accor d with and substantiates the subplantation model that treats low energ y ion beam deposition in terms of a shallow implantation process.