DEPOSITION AND CHARACTERIZATION OF AMORPHOUS-CARBON NITRIDE THIN-FILMS

Authors
DEMICHELIS F RONG XF SCHREITER S TAGLIAFERRO A DEMARTINO C
Citation
F. Demichelis et al., DEPOSITION AND CHARACTERIZATION OF AMORPHOUS-CARBON NITRIDE THIN-FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 361-365
Citations number
17
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
4
Issue
4
Year of publication
1995
Pages
361 - 365
Database
ISI
SICI code
0925-9635(1995)4:4<361:DACOAN>2.0.ZU;2-I
Abstract
In this paper, a set of amorphous carbon nitride (a-C:N) films with di fferent nitrogen contents were analysed. The most relevant deposition parameter is the nitrogen partial pressure, and the role of nitrogen i s to reduce the disordered sp(2) phase and the sp(3)/sp(2) ratio. The origin of the electron spin resonance active centres is identified to be the disordered sp(2) phase.