DEPOSITION BY REACTIVE ION-PLASMA SPUTTERING AND CHARACTERIZATION OF C-N THIN-FILMS

To prepare carbon nitride films, studies were performed on film deposi tion by reactive ion-plasma sputtering of a graphite target in an argo n-nitrogen atmosphere onto substrates of Si(100), Mo, KBr and glass. T he rate of him deposition varied between 0.5 and 1.3 mu m h(-1). The m icrohardness and elastic modulus of the films varied from 6.2 to 21.0 GPa and from 77 to 203 GPa respectively. X-ray diffraction, IR, scanni ng electron microscopy and Auger spectroscopy were used to examine the structure and composition of the deposited films.