MICRO-RAMAN FOR DIAMOND FILM STRESS-ANALYSIS

The residual stress in microwave plasma-enhanced CVD diamond film was analyzed using a Raman spectrometer with micrometer spatial resolution . This enables effective study of isolated crystals grown in the same deposition run. A variation of the Raman line shape near 1332 cm(-1) w as observed from different crystals in the same sample. A phenomenolog ical model was used to describe the shift and splitting of the diamond Raman line, from which the type and the magnitude of the stress in PE CVD grown diamond can be assessed. The interrelationship and the origi n of the stress in the film is discussed.