COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICHA-SIC-H FILMS

Authors
DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E
Citation
F. Demichelis et al., COMPARISON BETWEEN METHANE AND ACETYLENE AS CARBON-SOURCES FOR C-RICHA-SIC-H FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 473-477
Citations number
21
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
4
Issue
4
Year of publication
1995
Pages
473 - 477
Database
ISI
SICI code
0925-9635(1995)4:4<473:CBMAAA>2.0.ZU;2-7
Abstract
Films of a-SiC:H were deposited using an ultrahigh vacuum plasma-enhan ced CVD system from SiH4 + CH4 and SiH4 + C2H2 gas mixtures. The compo sitional, optical, structural and photoluminescence properties of the films were characterized. We have shown that using an acetylene plasma it is possible to grow films having an optical gap in the range 2.3-3 .3 eV, high uniformity and high deposition rate. IR spectroscopy revea led remarkable differences in carbon and hydrogen incorporation for th e different sources.