ELECTROMIGRATION IN SE-DOPED HG0.3CD0.7TE CRYSTALS

Using deep level transient spectroscopy (DLTS), an irreversible electr omigration of ions is observed in the space-charge region of Schottky contacts on Se-doped Hg0.3Cd0.7Te crystals. The amplitudes of the obse rved DLTS lines are found to change when a reverse bias is applied at a temperature higher than room temperature. Two lines (H2 and H4) are found to be correlated: the amplitude of one (H2) increases with appli ed reverse bias time t(a) in the same manner as that of the other (H4) decreases. As a possible explanation a model is presented, which is b ased on the dissociation of an acceptor-donor complex in the space-cha rge region. It yields a calculation of the mobility and the diffusion coefficient of the drifting donor.