A study of the annealed phases of Ge(111)/Ga for coverages above 0.05
ML is presented. The surfaces are investigated by low-energy electron
diffraction, scanning tunneling microscopy, and partly by photoemissio
n and surface X-ray diffraction using synchrotron radiation. For Ga co
verages beyond 0.05 ML and up to about 2 ML and annealing temperatures
higher than 500 degrees C four different phases appear. They all can
be characterized as being discommensurate. Surprisingly, no commensura
te superstructure appears on annealed Ge(111)/Ga.