CHARACTERISTICS OF OXYGEN-CONTAINING SILI CON SINGLE-CRYSTALS SUBJECTED TO LONG-TERM THERMAL TREATMENTS

Content of interstitial oxygen and oxygen-containing precipitates, as well as diffusion length of charge carriers have been investigated usi ng the methods of IR transmittance and surface photovoltage spectrosco py for samples of Czochralski silicon, subjected to thermal treatments within the temperature range of 450 to 1050 degrees C. Homogeneity of the planar distribution of the parameters mentioned has been studied. Interrelation between efficiency of internal gettering by SiO2 precip itates and their concentration is investigated. It is shown that the h omogeneity of planar distribution of recombination-active centres corr elates with homogeneity of distribution of precipitates formed at T = 650 degrees C.