PREPARATION AND CHARACTERIZATION OF MO-DOPED AND SB-MO-DOPED SNO2 SOL-GEL-DERIVED FILMS FOR COUNTERELECTRODE APPLICATIONS IN ELECTROCHROMICDEVICES

Mo-doped and Mo:Sb-doped SnO2 were made via the inorganic sol-gel rout e from the corresponding metal chloride precursors and the films were deposited by dip-coating technique. Films with a thickness of 100-170 nm were made by single dipping and the corresponding charge capacities were in the range 6-11 mC cm(-2). The films retained their high optic al transparency in the reduced and oxidized state and were promising c ounter-electrodes in electrochromic devices with transmissive modulati on. This was demonstrated by using the films as a counter-electrode in an electrochromic device employing an electrochromic phosphotungstic acid:titanium oxide xerogel film and 0.001 mol dm(-3) HClO4 aqueous el ectrolyte.