SI SIGE MMICS

Citation
Jf. Luy et al., SI SIGE MMICS, IEEE transactions on microwave theory and techniques, 43(4), 1995, pp. 705-714
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189480
Volume
43
Issue
4
Year of publication
1995
Part
1
Pages
705 - 714
Database
ISI
SICI code
0018-9480(1995)43:4<705:SSM>2.0.ZU;2-Y
Abstract
Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can prov ide new solutions for near range sensor and communication applications in the frequency range above 50 GHz, This paper gives a survey on the state-of-the-art performance of this technology and on first applicat ions. The key devices are IMPATT diodes for mm-wave power generation a nd detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mi xer circuits, The silicon/silicon germanium heterobipolar transistor ( SiGe HBT) with f(max) values of more than 90 GHz is now used for low-n oise oscillators at Ka-hand frequencies, First system applications are discussed.