RELATION BETWEEN PARAMETERS OF N-GAAS THI N-FILM STRUCTURES AND LOW-FREQUENCY BARRIER CAPACITANCE

Analytical calculation of low-frequency capacitance-voltage characteri stic of n-GaAs thin film with Scottky barrier - semiinsulating substra te structure under conditions of mergence of depletion region of Schot tky barrier and depletion region of film-substrate junction is carried out. The relations expressing such important parameters of the struct ure as concentration of empty deep centers in substrate near film subs trate interface and effective thickness of the film in terms of low-fr equency barrier capacitance are derived.