Nb. Gorev et al., RELATION BETWEEN PARAMETERS OF N-GAAS THI N-FILM STRUCTURES AND LOW-FREQUENCY BARRIER CAPACITANCE, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 333-336
Analytical calculation of low-frequency capacitance-voltage characteri
stic of n-GaAs thin film with Scottky barrier - semiinsulating substra
te structure under conditions of mergence of depletion region of Schot
tky barrier and depletion region of film-substrate junction is carried
out. The relations expressing such important parameters of the struct
ure as concentration of empty deep centers in substrate near film subs
trate interface and effective thickness of the film in terms of low-fr
equency barrier capacitance are derived.