THE STRUCTURE AND ELECTROPHYSICS PROPERTI ES OF IN-4(P2SE6)(3) MONOCRYSTALS

Authors
GARNOVDIJ OV GEBESH VY POTORY MV SEMAK DG
Citation
Ov. Garnovdij et al., THE STRUCTURE AND ELECTROPHYSICS PROPERTI ES OF IN-4(P2SE6)(3) MONOCRYSTALS, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 336-338
Citations number
5
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
3-4
Year of publication
1994
Pages
336 - 338
Database
ISI
SICI code
0202-3628(1994)39:3-4<336:TSAEPE>2.0.ZU;2-P
Abstract
The technological process of In-4(P2Se6)(3) monocrystals production as well as the features of their crystalline structure is described. The study of electrophysic and photoelectric properties of In-4(P2Se6)3 i s made. The charge scattering is found to take place on accoustic phon ons. Photoconducitivity is observed not only in the region of fundamen tal absorption but also in the impurity region. The activation eregy o f these impurities is determined to be 0.37 eV.