ELECTRONIC-PROPERTIES OF GERMANIUM - SAMA RIUM OXYSULPHID FILM SYSTEM

The electronic properties of germanium surface after deposition of Sm2 O2S thin film are studied. It is found that the germanium surface pote ntial call be essentially reduced in the temperature: range of 300 - 1 00 K by Sm2O2S film depostion which is connected with that the system of electron states (SES) on the germanium surfase changes. Energetic l ocation and concentration of SES and the changes that the Ge - Sm2O2S system is kept under the natural condition are defined. The nature of these changes essentially diffes from those observed in the Ge - GeO2 system.