THE PECULIARITIES OF MAGNETORESISTANCE AN D HALL-EFFECT IN GAAS EPITAXIAL-FILMS

The features of both magnetoresistance and Hall effect in GaAs epitaxy al layers grown by low temperature gas-phase epitaxy method have been studied. Experimental data is gathered for magnetic Fields H from 0 to 18300 Oe at 77 K. The major peculiarities of magnetoresistance are sh own to be caused determined by Herring's inhomogeneties randomly distr ibuted through layers while the magnetic field dependence of Hall coef ficient is due to the inhomogeneity of layer-substrate system along th e megnetic field it is due to near surface reliefs of basic electric p arameters n(c), mu(c) primarily to the layer-substrate interface.