INVESTIGATION OF OPTICAL-PROPERTIES OF TH IN VANADIUM DIOXIDE FILMS AT THE METAL-SEMICONDUCTOR PHASE-TRANSITION BY ELLIPSOMETRY

Authors
KSHNYAKINA SI IGNATENKO VM
Citation
Si. Kshnyakina et Vm. Ignatenko, INVESTIGATION OF OPTICAL-PROPERTIES OF TH IN VANADIUM DIOXIDE FILMS AT THE METAL-SEMICONDUCTOR PHASE-TRANSITION BY ELLIPSOMETRY, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 416-419
Citations number
8
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
3-4
Year of publication
1994
Pages
416 - 419
Database
ISI
SICI code
0202-3628(1994)39:3-4<416:IOOOTI>2.0.ZU;2-U
Abstract
The ellipsometry is used to study optical properties of thin vanadium dioxide films on mono- and polycrystal vanadium substrates for a metal - semiconductor transition. The measurements were carried out in the temperature range from 295 to 395 K. It is noted that there is an incr ease in a film thickness at the phase transition.