RADIATIVE DEFECT CREATION AND RADIOLYSIS OF THE CSI CRYSTALS SURFACE UNDER ELECTRON-IRRADIATION

The characteristics of defect creation and radiolysis of the CsI cryst al surface under electron irradiation has been investigated by the opt ical absorption and Auger electron spectroscopics. It was found that t he absorbed power of the electron irradiation dose was of great import ance in the radiative defect creation in CsI crystals. The limit value of it (P-lim(j) = 0.3 . 10(6) Gy/s), below which no defect creation i n the volume of the crystals occurs, has been evaluated. The last stag e of CsI radiolysis with Cs coagulation in the metallic phase, with so me ''quasi periodical'' connection with irradiation dose, was observed under irradiation doses D greater than or equal to 250 . 10(3) MGy (P hi greater than or equal to 3 . 10(19) electron . cm(-2)). The stoicht ometry of che surface under electron irradiation was violated towards the cesium over-saturation.